SUP45N03-13L vishay siliconix document number: 70804 s-05011?rev. f, 29-oct-01 www.vishay.com 1 n-channel 30-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) 0.013 @ v gs = 10 v 45 a 30 0.02 @ v gs = 4.5 v 45 a d g s n-channel mosfet to-220ab top view gd s SUP45N03-13L drain connected to tab
parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 10 v t c = 25 c 45 a continuous drain current (t j = 175 c) t c = 125 c i d 34 a pulsed drain current i dm 100 a avalanche current i ar 45 repetitive avalanche energy b l = 0.1 mh e ar 100 mj maximum power dissipation b t c = 25 c p d 88 c w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol limit unit junction-to-ambient free air r thja 85 junction-to-case r thjc 1.7 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material). for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SUP45N03-13L vishay siliconix www.vishay.com 2 document number: 70804 s-05011 ? rev. f, 29-oct-01
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 dss v ds = 30 v, v gs = 0 v, t j = 175 c 150 c 0.0155 0.02 c 0.02 0.026 v gs = 4.5 v, i d = 20 a 0.0145 0.02 forward transconductance a g fs v ds = 15 v, i d = 45 a 20 s dynamic b input capacitance c iss 2730 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf reversen transfer capacitance c rss 220 total gate charge c q g 45 70 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 45 a 8.5 nc gate-drain charge c q gd ds gs d 8 turn-on delay time c t d(on) 11 20 rise time c t r v dd = 15 v, r l = 0.33 9 20 turn-off delay time c t d(off) v dd = 15 v, r l = 0.33 45 a, v gen = 10 v, r g = 2.5 38 70 ns fall time c t f d gen g 11 20 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 45 pulsed current i sm 100 a forward voltage a v sd i f = 45 a, v gs = 0 v 1 1.3 v reverse recovery time t rr 35 70 ns peak reverse recovery current i rm(rec) i f = 45 a, di/dt = 100 a/ s 1.7 a reverse recovery charge q rr f c notes: a. pulse test; pulse width 300 s, duty cycle 2%. e. guaranteed by design, not subject to production testing. b. independent of operating temperature.
SUP45N03-13L vishay siliconix document number: 70804 s-05011 ? rev. f, 29-oct-01 www.vishay.com 3 0 1000 2000 3000 4000 0 6 12 18 24 30 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 0 102030405060 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080 0 20 40 60 80 100 012345 0 30 60 90 120 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c ? 55 c 3 v t c = 125 c v gs = 15 v i d = 45 a v gs = 10 thru 6 v 5 v v gs = 10 v c iss c oss c rss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d
SUP45N03-13L vishay siliconix www.vishay.com 4 document number: 70804 s-05011 ? rev. f, 29-oct-01 0.5 1.0 1.5 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) )
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 200 10 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse maximum drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 ? drain current (a) i d
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